- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D4-5 | + 125 C | 3 kW | Single | 1.2 kV | 1.8 V | 910 A | ||||
|
|
|
VIEW | Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | INT-A-PAK | + 150 C | 3.125 kW | Single | 1.2 kV | 1.9 V | 910 A | 400 nA |
