- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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VIEW | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 625 W | Dual | 600 V | 1.5 V | 290 A | 400 nA | |||
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VIEW | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 625 W | Full Bridge | 600 V | 1.5 V | 290 A | 400 nA | |||
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VIEW | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 750 W | Single | 600 V | 1.5 V | 290 A | 400 nA | |||
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VIEW | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 750 W | Dual | 600 V | 1.5 V | 290 A | 400 nA | |||
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VIEW | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 750 W | Single | 600 V | 1.5 V | 290 A | 400 nA | |||
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VIEW | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 625 W | Dual | 600 V | 1.5 V | 290 A | 400 nA | |||
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VIEW | Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP2-18 | + 100 C | 625 W | Dual | 600 V | 1.5 V | 290 A | 400 nA | |||
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VIEW | Infineon Technologies | IGBT Modules 1200V 200A DUAL | IGBT Silicon Modules | Half Bridge2 | + 150 C | 1.4 kW | Half Bridge | 1200 V | 2.5 V | 290 A | 400 nA |
