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- Collector- Emitter Voltage VCEO Max :
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15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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34
In-stock
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Silicon Modules | TO-247-3 | + 150 C | 962 W | Single | 1.2 kV | 3.5 V | 170 A | +/- 250 nA | |||
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49
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Silicon Modules | TO-247-3 | + 150 C | 694 W | Single | 1.2 kV | 3.5 V | 117 A | +/- 250 nA | |||
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114
In-stock
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IXYS | IGBT Modules 60 Amps 600V | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | 380 W | 600 V | 75 A | 100 nA | ||||
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30
In-stock
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IXYS | IGBT Modules High Voltage IGBTs | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | Single | 2.5 kV | 4.6 V | 13 A | +/- 100 nA | |||
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GET PRICE |
58
In-stock
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IXYS | IGBT Modules High Frequency Range 40khz C-IGBT w/Diode | TO-247-3 | + 150 C | Tube | 220 W | 600 V | 600 V | 60 A | 100 nA | ||||
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GET PRICE |
23
In-stock
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IXYS | IGBT Modules GenX3 600V IGBTs | TO-247-3 | + 150 C | Tube | 460 W | Single | 600 V | 600 V | 100 nA | ||||
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GET PRICE |
30
In-stock
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IXYS | IGBT Modules GenX3 600V IGBTs | TO-247-3 | + 150 C | Tube | 330 W | Single | 600 V | 600 V | 150 A | 100 nA | |||
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GET PRICE |
44
In-stock
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IXYS | IGBT Modules 48 Amps 600V | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | 300 W | Single | 600 V | 100 nA | ||||
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GET PRICE |
45
In-stock
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IXYS | IGBT Modules 30 Amps 600V | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | 220 W | Single | 600 V | 60 A | 100 nA | |||
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VIEW | Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq ... | IGBT Silicon Carbide Modules | TO-247-3 | + 175 C | 536 W | Single | 600 V | 1.45 V | 220 A | 600 nA | ||||
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VIEW | IXYS | IGBT Modules 15khz-40khz w/Diode Power Device | TO-247-3 | Tube | |||||||||||
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VIEW | IXYS | IGBT Modules GenX3 1200V IGBTs | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | Single | 1.2 kV | 2.4 V | 22 A | +/- 100 nA | ||||
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VIEW | IXYS | IGBT Modules GenX3 600V IGBTs | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | Single | 600 V | 1.59 V | 400 A | +/- 100 nA | ||||
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VIEW | IXYS | IGBT Modules Low-Frequency Range Low Vcesat w/ Diode | TO-247-3 | Tube | |||||||||||
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VIEW | IXYS | IGBT Modules Mid-Frequency Range 15khz-40khz w/ Diode | IGBT Silicon Modules | TO-247-3 | + 150 C | Tube | Single | 600 V | 1.49 V | 350 A | +/- 100 nA |
