- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.2 kOhms (1)
- 1.7 mOhms (1)
- 1.7 MOhms, 1.7 MOhms (1)
- 1.8 mOhms (1)
- 13 GOhms (2)
- 14 GOhms (3)
- 14 Ohms (6)
- 14 Ohms, 14 Ohms (8)
- 16 GOhms (3)
- 17 GOhms (3)
- 2 mOhms (1)
- 2.1 mOhms (1)
- 2.2 MOhms, 2.2 MOhms (1)
- 2.3 mOhms (1)
- 2.3 MOhms, 2.3 MOhms (1)
- 2.4 mOhms (1)
- 2.4 MOhms, 2.4 MOhms (1)
- 2.5 mOhms (1)
- 2.5 MOhms, 2.5 MOhms (1)
- 2.6 mOhms (1)
- 2.6 MOhms, 2.6 MOhms (1)
- 2.7 MOhms, 2.7 MOhms (1)
- 2.8 mOhms (1)
- 2.8 MOhms, 2.8 MOhms (1)
- 23 Ohms (1)
- 25 Ohms (14)
- 350 Ohms (1)
- 350 Ohms, 1.2 kOhms (1)
- 50 Ohms, 180 Ohms (2)
- 500 Ohms (1)
- 500 Ohms, 500 Ohms (2)
- Vgs th - Gate-Source Threshold Voltage :
-
- - 10 mV (5)
- - 20 mV (1)
- - 20 mV, - 20 mV (2)
- - 400 mV (1)
- -20 mV (1)
- 0.2 V (2)
- 0.4 V (4)
- 0.8 V (5)
- 1.4 V (4)
- 1.68 V (3)
- 1.68 V, 1.68 V (1)
- 1.78 V (4)
- 1.98 V (4)
- 180 mV, 180 mV (2)
- 2.08 V (4)
- 2.18 V, 2.18 V (1)
- 2.28 V (1)
- 2.28 V, 2.28 V (1)
- 2.38 V (1)
- 2.38 V, 2.38 V (1)
- 2.48 V (1)
- 2.48 V, 2.48 V (1)
- 2.58 V (1)
- 2.58 V, 2.58 V (1)
- 2.68 V (1)
- 2.68 V, 2.68 V (1)
- 2.78 V (1)
- 2.78 V, 2.78 V (1)
- 400 mV (1)
- 400 mV, - 400 mV (3)
- 780 mV (3)
- Channel Mode :
- Applied Filters :
104 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
126
In-stock
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Advanced Linear Devices | MOSFET Dual P&N-Ch. Pair | 10.6 V | Through Hole | PDIP-14 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel, P-Channel | 12 V, - 12 V | 40 mA, - 16 mA | 50 Ohms, 180 Ohms | 400 mV, - 400 mV | Enhancement | |||
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GET PRICE |
227
In-stock
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Advanced Linear Devices | MOSFET Quad MOSFET ARRAY Vt=2.70V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 10 mA | 23 Ohms | 2.68 V | Enhancement | SAB | ||
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GET PRICE |
113
In-stock
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Advanced Linear Devices | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | - 20 mV, - 20 mV | Depletion | |||
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GET PRICE |
46
In-stock
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Advanced Linear Devices | MOSFET Dual MOSFET ARRAY Vt=2.60V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.6 MOhms, 2.6 MOhms | 2.58 V, 2.58 V | Enhancement | SAB | ||
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GET PRICE |
22
In-stock
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Advanced Linear Devices | MOSFET Dual MOSFET ARRAY Vt=2.70V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.7 MOhms, 2.7 MOhms | 2.68 V, 2.68 V | Enhancement | SAB | ||
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GET PRICE |
48
In-stock
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Advanced Linear Devices | MOSFET Quad MOSFET ARRAY Vt=2.60V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2.6 mOhms | 2.58 V | Enhancement | SAB | ||
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GET PRICE |
23
In-stock
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Advanced Linear Devices | MOSFET Quad EPAD(R) N-Ch | 10.6 V | Through Hole | PDIP-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 12 mA | 500 Ohms | - 10 mV | Depletion | |||
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GET PRICE |
13
In-stock
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Advanced Linear Devices | MOSFET Dual EPAD(R) N-Ch | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 12 mA, 12 mA | 500 Ohms, 500 Ohms | - 10 mV | Depletion | |||
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GET PRICE |
50
In-stock
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Advanced Linear Devices | MOSFET Quad MOSFET ARRAY Vt=2.50V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2.5 mOhms | 2.48 V | Enhancement | SAB | ||
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GET PRICE |
45
In-stock
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Advanced Linear Devices | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | - 10 mV | Depletion | |||
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GET PRICE |
93
In-stock
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Advanced Linear Devices | MOSFET Quad P-Channel Array | -10.6 V | Through Hole | PDIP-14 | 0 C | + 70 C | Tube | 4 Channel | Si | P-Channel | - 12 V | - 2 mA | 1.2 kOhms | - 400 mV | Enhancement | |||
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GET PRICE |
49
In-stock
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Advanced Linear Devices | MOSFET Quad N-Channel Array | 10.6 V | Through Hole | PDIP-14 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 12 V | 4.8 mA | 350 Ohms | 400 mV | Enhancement | |||
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GET PRICE |
226
In-stock
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Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.20V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.2 MOhms, 2.2 MOhms | 2.18 V, 2.18 V | Enhancement | |||
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GET PRICE |
82
In-stock
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Advanced Linear Devices | MOSFET Quad SAB MOSFET ARRAY VT=2.50V | SOIC-16 | - 40 C | + 85 C | Tube | 4 Channel | Si | N-Channel | ||||||||||
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GET PRICE |
100
In-stock
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Advanced Linear Devices | MOSFET Quad MOSFET ARRAY Vt=2.30V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2.3 mOhms | 2.28 V | Enhancement | SAB | ||
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GET PRICE |
18
In-stock
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Advanced Linear Devices | MOSFET Quad SAB MOSFET ARRAY VT=1.80V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 1.8 mOhms | 1.78 V | Enhancement | |||
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GET PRICE |
42
In-stock
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Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 1.4 V | Enhancement | EPAD | ||
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GET PRICE |
22
In-stock
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Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | 780 mV | Enhancement | EPAD | ||
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GET PRICE |
9
In-stock
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Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | 180 mV, 180 mV | Enhancement | EPAD | ||
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GET PRICE |
12
In-stock
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Advanced Linear Devices | MOSFET Quad SAB MOSFET ARRAY VT=2.00V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2 mOhms | 1.98 V | Enhancement | |||
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GET PRICE |
20
In-stock
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Advanced Linear Devices | MOSFET Quad SAB MOSFET ARRAY VT=2.10V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2.1 mOhms | 2.08 V | Enhancement | |||
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GET PRICE |
31
In-stock
|
Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=1.70V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 1.7 MOhms, 1.7 MOhms | 1.68 V, 1.68 V | Enhancement | |||
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GET PRICE |
30
In-stock
|
Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V, 10.6 V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | 780 mV | Enhancement | EPAD | ||
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GET PRICE |
12
In-stock
|
Advanced Linear Devices | MOSFET Dual MOSFET ARRAY Vt=2.30V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.3 MOhms, 2.3 MOhms | 2.28 V, 2.28 V | Enhancement | SAB | ||
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GET PRICE |
20
In-stock
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Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.50V | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | ||||||||||
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GET PRICE |
17
In-stock
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Advanced Linear Devices | MOSFET Dual MOSFET ARRAY Vt=2.40V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.4 MOhms, 2.4 MOhms | 2.38 V, 2.38 V | Enhancement | SAB | ||
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GET PRICE |
23
In-stock
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Advanced Linear Devices | MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | - 10 mV | Depletion | |||
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GET PRICE |
37
In-stock
|
Advanced Linear Devices | MOSFET Quad N-Ch Matched Pr VGS=0.0V | 10.6 V | Through Hole | PDIP-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | 0.8 V | Enhancement | EPAD | ||
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GET PRICE |
38
In-stock
|
Advanced Linear Devices | MOSFET Quad MOSFET ARRAY Vt=2.80V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2.8 mOhms | 2.78 V | Enhancement | SAB | ||
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|
GET PRICE |
39
In-stock
|
Advanced Linear Devices | MOSFET Quad SAB MOSFET ARRAY VT=1.70V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 1.7 mOhms | 1.68 V | Enhancement |
