- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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628
In-stock
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ROHM Semiconductor | MOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC | - 6 V to + 22 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 14 A | 280 mOhms | 1.6 V to 4 V | 36 nC | |||
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3,327
In-stock
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ROHM Semiconductor | MOSFET Pch -45V -2.0A Power MOSFET | +/- 20 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 45 V | - 2 A | 280 mOhms | - 1 V | 9.5 nC | Enhancement | ||
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2,698
In-stock
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ROHM Semiconductor | MOSFET P-CH 20V 1A | 12 V | SMD/SMT | SOT-353T-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1 A | 280 mOhms | Enhancement | ||||
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3,141
In-stock
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ROHM Semiconductor | MOSFET P-CH 20V 1A TUMT3 | 12 V | SMD/SMT | SOT-323T-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1 A | 280 mOhms | Enhancement | ||||
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VIEW | ROHM Semiconductor | MOSFET TRANS MOSFET P-CH 20V 1A TR | +/- 12 V | SMD/SMT | SOT-563T-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel, SBD | - 20 V | - 1 A | 280 mOhms | - 2 V | 2.1 nC | Enhancement |
