- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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800
In-stock
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ROHM Semiconductor | MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide | - 6 V to 22 V | SMD/SMT | TO-268-3 | + 175 C | Reel | 1 Channel | SiC | N-Channel | 1.7 kV | 4 A | 1.15 Ohms | 1.6 V | 14 nC | Enhancement | |||
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GET PRICE |
396
In-stock
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ROHM Semiconductor | MOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide | - 6 V to 22 V | SMD/SMT | TO-268-3 | + 175 C | Reel | 1 Channel | SiC | N-Channel | 1.7 kV | 5.9 A | 750 mOhms | 1.6 V | 17 nC | Enhancement | |||
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GET PRICE |
1,245
In-stock
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ROHM Semiconductor | MOSFET 1700V 3.7A N-MOSFET Silicon Carbide SiC | - 6 V to + 22 V | Through Hole | TO-3PFM-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 3.7 A | 1.5 Ohms | 1.6 V | 14 nC | Enhancement |
