- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
5,326
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Ch UltraFET Trench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 4.9 A | 47 mOhms | Enhancement | UltraFET | ||||
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GET PRICE |
3,650
In-stock
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Infineon / IR | MOSFET 30V DUAL N-CH HEXFET 50mOhms 16.7nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | Enhancement | ||||
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GET PRICE |
8,868
In-stock
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Diodes Incorporated | MOSFET 20V N-Channel Enhance. Mode MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.9 A | 45 mOhms | Enhancement | |||||
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GET PRICE |
700
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 4.9A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | |||||||
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GET PRICE |
1,763
In-stock
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Cree, Inc. | MOSFET SIC MOSFET 1700V RDS ON 1 Ohm | - 10 V, + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 4.9 A | 1 Ohms | 2.4 V | 13 nC | Enhancement | |||
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VIEW | Infineon / IR | MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4.9 A | 80 mOhms | 16.7 nC | Enhancement |
