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- Vds - Drain-Source Breakdown Voltage :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
5,462
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 28 A | 65 mOhms | 42 nC | Enhancement | |||
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GET PRICE |
875
In-stock
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ON Semiconductor | MOSFET POWER MOSFET | 20 V | SMD/SMT | ATPAK-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 28 A | 57 mOhms | ||||||
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1,839
In-stock
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ON Semiconductor | MOSFET PCH 4V DRIVE SERIES | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 28 A | 28.5 mOhms | 80 nC | ||||
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82
In-stock
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IXYS | MOSFET 28 Amps 65V 0.045 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 28 A | 45 mOhms | - 2.5 V | 46 nC | Enhancement | ||
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GET PRICE |
100
In-stock
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IXYS | MOSFET 28 Amps 65V 0.045 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 28 A | 45 mOhms |
