- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
5,000
In-stock
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Nexperia | MOSFET PMDXB600UNEL/DFN1010B-6/REEL 7 | 8 V, 8 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 600 mA, 600 mA | 470 mOhms, 470 mOhms | 450 mV, 450 mV | 700 pC, 700 pC | Enhancement | ||
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GET PRICE |
7,148
In-stock
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Nexperia | MOSFET 20 V, dual N-channel Trench MOSFET | 8 V, 8 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 600 mA, 600 mA | 3 Ohms, 3 Ohms | 450 mV, 450 mV | 0.4 nC | Enhancement |
