- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,128
In-stock
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Infineon / IR | MOSFET 75V 1 N-CH HEXFET 3mOhms 160nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 75 V | 230 A | 2.5 mOhms | 160 nC | ||||||||
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748
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.5 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
482
In-stock
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Infineon / IR | MOSFET MOSFET N-CH 60V 257A TO247 | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 195 A | 2.5 mOhms | 4 V | 300 nC | ||||||||
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GET PRICE |
100
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 265 A | 2.5 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
336
In-stock
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Infineon Technologies | MOSFET 40V 120A 2.5 mOhm HEXFET 90nC 208W | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 135 nC | Enhancement | StrongIRFET | ||||||
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555
In-stock
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Infineon / IR | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 2.5 mOhms | 1.35 V | 54 nC | Enhancement | StrongIRFET | |||
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411
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.9mOhm 120A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | |||
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536
In-stock
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Infineon Technologies | MOSFET MOSFET, 40V, 120A, 2 90 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 135 nC | Enhancement | StrongIRFET | ||||||
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219
In-stock
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Infineon / IR | MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, TO-262 | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET | ||||
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GET PRICE |
58
In-stock
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IXYS | MOSFET 300 Amps 40V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 300 A | 2.5 mOhms | |||||||||||
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GET PRICE |
11
In-stock
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IXYS | MOSFET Trench T2 Power MOSFET | Through Hole | TO-247-3 | Tube | Si | N-Channel | 40 V | 300 A | 2.5 mOhms | |||||||||||
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350
In-stock
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Texas Instruments | MOSFET 100V N-CH NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 2.5 mOhms | 2.5 V | 118 nC | NexFET | ||||
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GET PRICE |
50
In-stock
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Advanced Linear Devices | MOSFET Quad MOSFET ARRAY Vt=2.50V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2.5 mOhms | 2.48 V | Enhancement | SAB | ||||
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GET PRICE |
1,982
In-stock
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STMicroelectronics | MOSFET N-Ch 80 V 2.1 mOhm 180 A STripFET VI DG | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 180 A | 2.5 mOhms | 2 V to 4 V | 193 nC | |||||
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VIEW | IXYS | MOSFET 300 Amps 40V 0.025 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 300 A | 2.5 mOhms | ||||||||
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GET PRICE |
321
In-stock
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Infineon / IR | MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, D2-Pak | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 208 A | 2.5 mOhms | 3.9 V | 135 nC | Enhancement | StrongIRFET |