- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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14,117
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5 A | 860 mOhms | 3 V | 8.8 nC | ||||
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GET PRICE |
13,174
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 860 mOhms | 3 V | 8.8 nC | ||||
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GET PRICE |
2,758
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | PowerFLAT-5x6-HV-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.8 A | 860 mOhms | 3 V | 10 nC | Enhancement | |||
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GET PRICE |
2,929
In-stock
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Fairchild Semiconductor | MOSFET Single PT5, PCH, 150/25V in MLP 2x2 | 25 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 1 A | 860 mOhms | - 3.2 V | 2.8 nC | PowerTrench | |||
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GET PRICE |
1,296
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 860 mOhms | 3 V | 8.8 nC | ||||
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GET PRICE |
2,374
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 | 25 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 860 mOhms | 3 V | 8.8 nC | ||||
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GET PRICE |
4,820
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.8 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | ||
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GET PRICE |
662
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.4A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | ||
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GET PRICE |
1,485
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 3 V | 13 nC | Enhancement | CoolMOS | ||
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GET PRICE |
470
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | Through Hole | TO-262-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 7.4 A | 860 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | ||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 4.4A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | |||
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VIEW | Toshiba | MOSFET N-Ch MOS 8.5A 550V 40W 1050pF 0.86 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 550 V | 8.5 A | 860 mOhms | |||||||||||
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GET PRICE |
999
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 860 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | ||
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GET PRICE |
122
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.4A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | ||
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GET PRICE |
866
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 4.3A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 860 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | ||
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GET PRICE |
73
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.4A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | |||
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GET PRICE |
80
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 12.8A IPAK-3 | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6.6 A | 860 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS |
