- Manufacture :
- Mounting Style :
- Package / Case :
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- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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847
In-stock
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STMicroelectronics | MOSFET N-Ch 70V 20A OmniFET | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 70 V | 20 A | 50 mOhms | 60 nC | Enhancement | |||||
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GET PRICE |
280
In-stock
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STMicroelectronics | MOSFET N-Ch 70V 20A OmniFET | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 70 V | 20 A | 50 mOhms | 60 nC | Enhancement | |||||||
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70
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | - 4 V | 60 nC | Enhancement | PolarP | ||
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GET PRICE |
62
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | - 4 V | 60 nC | Enhancement | PolarP | ||
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GET PRICE |
131
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | - 4 V | 60 nC | Enhancement | PolarP | ||
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VIEW | IXYS | MOSFET 48 Amps 200V 50 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 48 A | 50 mOhms | 4.5 V | 60 nC | Enhancement | Trench |
