- Manufacture :
- Vgs - Gate-Source Voltage :
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- Rds On - Drain-Source Resistance :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,000
In-stock
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Toshiba | MOSFET N-Ch 60V 4180pF 60nC 160A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 1.9 mOhms | 1.5 V | 60 nC | Enhancement | |||
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3,000
In-stock
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Vishay / Siliconix | MOSFET N-Channel 80V PowerPAK SO-8L | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 60 A | 6.8 mOhms | 1.5 V | 60 nC | Enhancement |
