- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
5,310
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10.9 A | 146 mOhms | 2 V | 11.4 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
5,891
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 30 mOhms | 1.5 V | 11.4 nC | Enhancement | |||
|
|
GET PRICE |
2,440
In-stock
|
Central Semiconductor | MOSFET 650V N-Ch PFC FET 30Vgs 3.0nC 2.44Ohm | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4 A | 2.44 Ohms | 2 V | 11.4 nC | Enhancement | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10.9 A | 146 mOhms | 2 V | 11.4 nC | Enhancement | OptiMOS |
