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Pd - Power Dissipation :
Technology :
Vds - Drain-Source Breakdown Voltage :
Vgs - Gate-Source Breakdown Voltage :
Transistor Type :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Breakdown Voltage Gain Transistor Type
ATF-35143-TR1G
1+
$0.6200
10+
$0.5240
100+
$0.4200
500+
$0.3776
3000+
$0.2832
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RFQ
2,918
In-stock
Broadcom / Avago RF JFET Transistors Transistor GaAs Low Noise SMD/SMT SOT-343 + 160 C Reel 300 mW GaAs N-Channel 5.5 V 80 mA - 5 V 18 dB pHEMT
PMBFJ108,215
1+
$0.1760
10+
$0.1448
100+
$0.0884
1000+
$0.0684
3000+
$0.0580
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RFQ
5,201
In-stock
NXP Semiconductors RF JFET Transistors JFET N-CH 25V 6MA SMD/SMT SOT-23   Reel 250 mW Si N-Channel 25 V 80 mA - 25 V    
ATF-35143-BLKG
1+
$0.6200
10+
$0.5240
100+
$0.4200
500+
$0.3776
GET PRICE
RFQ
4,778
In-stock
Broadcom / Avago RF JFET Transistors Transistor GaAs Low Noise SMD/SMT SOT-343 + 160 C Bulk 300 mW GaAs N-Channel 5.5 V 80 mA - 5 V 18 dB pHEMT
ATF-35143-TR2G
10000+
$0.2508
VIEW
RFQ
Broadcom / Avago RF JFET Transistors Transistor GaAs Low Noise SMD/SMT SOT-343 + 160 C Reel 300 mW GaAs N-Channel 5.5 V 80 mA - 5 V 18 dB pHEMT
J108,126
10000+
$0.0940
20000+
$0.0900
50000+
$0.0888
VIEW
RFQ
NXP Semiconductors RF JFET Transistors N-Channel Single '+/- 25V 80mA Through Hole TO-92   Ammo Pack 400 mW Si N-Channel 25 V 80 mA 25 V   JFET
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